IEEE Journal of the Electron Devices Society

eISSN: 2168-6734pISSN: 2168-6734
JournalOpen Access

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Key Metrics

CiteScore
4.7
Impact Factor
< 5
SJR
Q2Biotechnology
SNIP
1.1

Journal Specifications

Indexed in the following public directories

  • Web of Science Web of Science
  • Scopus Scopus
  • DOAJ DOAJ
  • Inspec Inspec
  • SJR SJR
Overview
  • Publisher
    IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
  • Language
    English
  • Frequency
    Continuous publication
  • Article Processing Charges
    USD 1350
  • Publication Time
    9
  • Editorial Review Process
    Anonymous peer review
General Details
  • Language
    English
  • Society/Institute/Sponsor
    IEEE Electron Devices Society
  • Frequency
    Continuous publication
  • Publication Start Year
    2013
  • Publisher URL
  • Website URL
Publication Details
Editorial Review Detail
Information for authors
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Topics Covered

Breakdown voltage
MOSFET
Room temperature
Magnetic memory
Simulation
Heterojunction
Contact resistance
Frequency analysis
Subthreshold swing
Hysteresis
Urea biosensor
Gate driver
Gate dielectric
Figure of merit
CMOS
Process optimization
Spectral power distribution
Threshold voltage
Power MOSFET
Work function

Recently Published Papers

FAQs

Since when has IEEE Journal of the Electron Devices Society been publishing? Faqs

The IEEE Journal of the Electron Devices Society has been publishing since 2013 till date.

How frequently is the IEEE Journal of the Electron Devices Society published? Faqs

IEEE Journal of the Electron Devices Society is published Continuous publication.

Who is the publisher of IEEE Journal of the Electron Devices Society? Faqs

The publisher of IEEE Journal of the Electron Devices Society is IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.

How can I view the journal metrics of IEEE Journal of the Electron Devices Society on editage? Faqs

For the IEEE Journal of the Electron Devices Society metrics, please refer to the section above on the page.

What is the eISSN and pISSN number of IEEE Journal of the Electron Devices Society? Faqs

The eISSN number is 2168-6734 and pISSN number is 2168-6734 for IEEE Journal of the Electron Devices Society.

What is the focus of this journal? Faqs

The journal covers a wide range of topics inlcuding Breakdown voltage, MOSFET, Room temperature, Magnetic memory, Simulation, Heterojunction, Contact resistance, Frequency analysis, Subthreshold swing, Hysteresis, Urea biosensor, Gate driver, Gate dielectric, Figure of merit, CMOS, Process optimization, Spectral power distribution, Threshold voltage, Power MOSFET, Work function.

Why is it important to find the right journal for my research? Faqs

Choosing the right journal ensures that your research reaches the most relevant audience, thereby maximizing its scholarly impact and contribution to the field.

Can the choice of journal affect my academic career? Faqs

Absolutely. Publishing in reputable journals can enhance your academic profile, making you more competitive for grants, tenure, and other professional opportunities.

Is it advisable to target high-impact journals only? Faqs

While high-impact journals offer greater visibility, they are often highly competitive. It's essential to balance the journal's impact factor with the likelihood of your work being accepted.