IEEE Transactions on Device and Materials Reliability

eISSN: 1558-2574pISSN: 1530-4388

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Key Metrics

CiteScore
3.9
Impact Factor
< 5
SNIP
1.24

Journal Specifications

Indexed in the following public directories

  • Web of Science
  • Scopus
  • Inspec
  • SJR
Overview
  • Publisher
    IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
  • Language
    English
  • Frequency
    Quarterly
General Details
  • Language
    English
  • Frequency
    Quarterly
  • Publication Start Year
    2001
  • Publisher URL
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Topics Covered

Electrostatic discharge
Simulation
Room temperature
Sram cell
Junction temperature
Printed circuit board
CMOS
Flash memory
Redistribution layer
Static noise margin
Nonlinear capacitance
Variable capacitor
Electrochemical migration
Current driver
Electromigration
MOSFET
Single event upset
Power grid
Gate dielectric
Breakdown voltage

Recently Published Papers

Year-wise Publication

FAQs

Since when has IEEE Transactions on Device and Materials Reliability been publishing? Faqs

The IEEE Transactions on Device and Materials Reliability has been publishing since 2001 till date.

How frequently is the IEEE Transactions on Device and Materials Reliability published? Faqs

IEEE Transactions on Device and Materials Reliability is published Quarterly.

Who is the publisher of IEEE Transactions on Device and Materials Reliability? Faqs

The publisher of IEEE Transactions on Device and Materials Reliability is IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.

How can I view the journal metrics of IEEE Transactions on Device and Materials Reliability on editage? Faqs

For the IEEE Transactions on Device and Materials Reliability metrics, please refer to the section above on the page.

What is the eISSN and pISSN number of IEEE Transactions on Device and Materials Reliability? Faqs

The eISSN number is 1558-2574 and pISSN number is 1530-4388 for IEEE Transactions on Device and Materials Reliability.

What is the focus of this journal? Faqs

The journal covers a wide range of topics inlcuding Electrostatic discharge, Simulation, Room temperature, Sram cell, Junction temperature, Printed circuit board, CMOS, Flash memory, Redistribution layer, Static noise margin, Nonlinear capacitance, Variable capacitor, Electrochemical migration, Current driver, Electromigration, MOSFET, Single event upset, Power grid, Gate dielectric, Breakdown voltage.

Why is it important to find the right journal for my research? Faqs

Choosing the right journal ensures that your research reaches the most relevant audience, thereby maximizing its scholarly impact and contribution to the field.

Can the choice of journal affect my academic career? Faqs

Absolutely. Publishing in reputable journals can enhance your academic profile, making you more competitive for grants, tenure, and other professional opportunities.

Is it advisable to target high-impact journals only? Faqs

While high-impact journals offer greater visibility, they are often highly competitive. It's essential to balance the journal's impact factor with the likelihood of your work being accepted.