IEEE Transactions on Electron Devices

eISSN: 1557-9646pISSN: 0018-9383

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Aims and Scope

IEEE Transactions on Electron Devices (T-ED) is a monthly peer-reviewed scientific journal publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth. Less

Key Metrics

CiteScore
5.3
Impact Factor
< 5
SJR
Q1Electrical and Electronic Engineering
SNIP
1.36

Journal Specifications

Indexed in the following public directories

  • Scopus Scopus
  • SJR SJR
Overview
  • Publisher
    IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
  • Language
    English
  • Frequency
    Monthly
General Details
  • Language
    English
  • Frequency
    Monthly
  • Publication Start Year
    1954
  • Publisher URL
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Topics Covered

Heterojunction
Breakdown voltage
Oxide
MOSFET
Simulation
CMOS
Contact resistance
Surface roughness
Photodiode
Broadband
Gate dielectric
Low voltage
Experimental data
Resistive switching
Irradiation
Biosensor
Threshold voltage
Electron mobility
Room temperature
Flash memory

Recently Published Papers

Year-wise Publication

FAQs

Since when has IEEE Transactions on Electron Devices been publishing? Faqs

The IEEE Transactions on Electron Devices has been publishing since 1954 till date.

How frequently is the IEEE Transactions on Electron Devices published? Faqs

IEEE Transactions on Electron Devices is published Monthly.

Who is the publisher of IEEE Transactions on Electron Devices? Faqs

The publisher of IEEE Transactions on Electron Devices is IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.

Where can I find a journal's aims and scope of IEEE Transactions on Electron Devices? Faqs

For the IEEE Transactions on Electron Devices's Aims and Scope, please refer to the section above on the page.

How can I view the journal metrics of IEEE Transactions on Electron Devices on editage? Faqs

For the IEEE Transactions on Electron Devices metrics, please refer to the section above on the page.

What is the eISSN and pISSN number of IEEE Transactions on Electron Devices? Faqs

The eISSN number is 1557-9646 and pISSN number is 0018-9383 for IEEE Transactions on Electron Devices.

What is the focus of this journal? Faqs

The journal covers a wide range of topics inlcuding Heterojunction, Breakdown voltage, Oxide, MOSFET, Simulation, CMOS, Contact resistance, Surface roughness, Photodiode, Broadband, Gate dielectric, Low voltage, Experimental data, Resistive switching, Irradiation, Biosensor, Threshold voltage, Electron mobility, Room temperature, Flash memory.

Why is it important to find the right journal for my research? Faqs

Choosing the right journal ensures that your research reaches the most relevant audience, thereby maximizing its scholarly impact and contribution to the field.

Can the choice of journal affect my academic career? Faqs

Absolutely. Publishing in reputable journals can enhance your academic profile, making you more competitive for grants, tenure, and other professional opportunities.

Is it advisable to target high-impact journals only? Faqs

While high-impact journals offer greater visibility, they are often highly competitive. It's essential to balance the journal's impact factor with the likelihood of your work being accepted.